ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell
Springer Science and Business Media LLC -- Solar Energy Materials and Solar Cells
DOI 10.1016/j.solmat.2013.04.028
Keyword(s)
  1. SIS solar cell
  2. AZO
  3. Tunnel barrier
  4. Metal oxides
  5. ALD
  6. XPS
Abstract(s)

Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current–density as low as 3×10−7 A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.