ResearchPad - Renewable Energy, Sustainability and the Environment Default RSS Feed en-us © 2020 Newgen KnowledgeWorks <![CDATA[Straw use and availability for second generation biofuels in England]]> <![CDATA[ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell]]>

Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current–density as low as 3×10−7 A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.